Research & Production Company MicroSensor Ltd

Our products [index.html] About Us Current International R & D Projects INTAS Project 2000-476 Temperature and Magnetic Field Sensors Meetings Contact Silicon-based diode temperature sensors Diode temperature sensors can be used for static and dynamic temperature measurements in the 2 K to 450 K temperature range. Two types of sensor packages are offered: micropackage (1.2 mm in diameter and 1.0 mm long) canister package (3 mm in diameter and 5 mm long) The sensitive element for temperature sensor is a silicon p +- n - n + planar diode. The size of the diode structure is 0.35 mm x 0.35 mm x 0.2 mm. This sensitive element is placed in nonmagnetic miniature package that protects the sensitive element from harmful external actions. The diode temperature microsensor overall size is 1.2 mm in diam. x 1.0 mm long. The microsensors (1.2 mm in diameter and 1.0 mm long) can be used when temperature measurement with high spatial resolution and small response time is required. They can also be incorporated in canister package (3 mm in diameter and 5 mm long). Characteristics of Si-based diode temperature sensors Voltage, U , and sensitivity, dU / dT , vs temperature, T , curves at different currents Back